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Electron_microscope (including recent related patents.)
Electron microscopeThe electron microscope can magnify very small details with high resolving power due to the use of electrons rather than light to scatter off material, magnifying at levels up to 500,000 times. Table of contents showTocToggle("show","hide") 1 History 2 Process 3 Types 4 Treatment 5 Disadvantages History The first electron microscope was built in 1931 by Ernst Ruska and Max Knoll. It was greatly developed through the 1950s and has allowed great advances in the natural sciences. The advantage of an electron beam is that it has a much smaller wavelength (see wave-particle duality), which allows a higher resolution - the measure of how close together two things can be before they are seen as one. Light microscopes allow a resolution of about 0.2 micrometres, whereas electron microscopes can have resolutions as low as 0.1 nanometers. Process High voltage electron beams from a cathode are focused by magnetic lenses on to the specimen. They are then magnified by a series of magnetic lenses until they hit photographic plate or light sensitive sensors - which transfer the image to a computer screen. The image produced is called an electron micrograph (EM). Types The Transmission electron microscope (TEM) produces images by detecting electrons that are transmitted through the sample, while the Scanning electron microscope (SEM) produces images by detecting secondary electrons which are emitted from the surface due to excitation by the primary electron beam. Generally, the TEM resolution is about an order of magnitude better than the SEM resolution, however, because the SEM image relies on surface processes rather than transmission it is able to image bulk samples and has a much greater depth of view, and so can produce images that are a good representation of the 3D structure of the sample. Treatment Samples viewed under an electron microscope have to be treated in many ways:
This article is adapted from from Wikipedia All Wikipedia article text is available under the terms of the GNU Free Documentation License Recent Electron_microscope related patents From USPTO: 6718227: System and method for determining a position error in a wafer handling device 6717602: Image forming method and image forming apparatus, and electrostatic latent image developing toner used by the same 6717231: Trench isolation regions having recess-inhibiting layers therein that protect against overetching 6717202: HSG semiconductor capacitor with migration inhibition layer 6717187: Semiconductor optical device and the fabrication method 6717179: Semiconductor device and semiconductor display device 6717157: Mask inspecting apparatus 6717156: Beam as well as method and equipment for specimen fabrication 6717145: Mapping electron microscopes exhibiting improved imaging of specimen having chargeable bodies 6717144: Scanning electron microscope system 6717143: Beam alignment in a lower column of a scanning electron microscope or the like 6717141: Reduction of aberrations produced by Wien filter in a scanning electron microscope and the like 6717116: Semiconductor production device ceramic plate 6717109: Heatable mirror, method for producing a heat conductive layer, and the use thereof 6716925: Tire with a component made of a rubber composition comprised of a rubber having pendant hydroxyl groups and a rubber containing a nitrile moiety 6716923: Resin composition for powder molding 6716858: Methods for inhibiting diabetic complications 6716813: Use of antimicrobial proteins and peptides for the treatment of otitis media and paranasal sinusitis 6716803: Cleaning agent for a semi-conductor substrate 6716776: Nonwoven fabric made from filaments and artificial leather containing it 6716767: Contact planarization materials that generate no volatile byproducts or residue during curing 6716738: Method of fabricating multilayered UBM for flip chip interconnections by electroplating 6716726: Thin film semiconductor device containing polycrystalline Si--Ge alloy and method for producing thereof 6716650: Interface void monitoring in a damascene process 6716648: Method of manufacturing and testing semiconductor integrated circuit device 6716638: Measuring conducting paths using infrared thermography 6716628: Chondrogenesis promoters and indolin-2-one derivatives 6716589: Discordant helix stabilization for prevention of amyloid formation 6716572: Manufacturing process for printed wiring board 6716570: Low temperature resist trimming process 6716567: Supporting body for lithography block and original lithography block 6716564: Radiation-sensitive resin composition 6716561: Toner for developing electrostatic latent image and image forming method using same 6716557: Anode material for non-aqueous electrolyte secondary battery and non-aqueous electrolyte secondary battery using such anode material 6716551: Abraded fluid diffusion layer for an electrochemical fuel cell 6716548: Composite electrolyte membranes for fuel cells and methods of making same 6716542: Sputtering target for production of a magnetic recording medium 6716540: Multilayer film formed body 6716524: Rare earth borate and making method 6716521: Polyester composition, film made thereof, and magnetic recording medium 6716516: Magnetic recording medium and magnetic recording apparatus using the same 6716511: Propylene polymer fibers and yarns 6716495: Ink-jet recording apparatus and recording medium 6716480: Transparent conductive layered structure and method of producing the same, coating liquid for forming transparent coating layer and coating liquid for forming transparent conductive layer 6716479: Tailoring piezoelectric properties using MgxZn1-xO/ZnO material and MgxZn1-xO/ZnO structures 6716409: Fabrication of nanotube microscopy tips 6716389: Tantalum and tantalum nitride powder mixtures for electrolytic capacitors substrates 6716378: Method for forming hierarchically ordered porous oxides 6716370: Supramolecular oxo-anion corrosion inhibitors |