Information & explanations, latest texts & monographs on
Antiferromagnet (including recent related patents.)
Antiferromagnetism(Redirected from Antiferromagnet) In materials that exhibit antiferromagnetism, the spins of magnetic electrons align in a regular pattern with neighboring spins pointing in opposite directions. This is the opposite of ferromagnetism. Generally, antiferromagnetic materials exhibit antiferromagnetism at a low temperature, and become disordered above a certain temperature; the transition temperature is called the Neel temperature. Above the Neel temperature, the material is typically paramagnetic. The magnetic susceptibility of an antiferromagnetic material will appear to go through a maximum as the temperature is lowered; in contrast, that of a paramagnet will continually increase with decreasing temperature. Antiferromagnetic materials have a negative coupling between adjacent moments and low frustration. Antiferromagnetic materials are relatively uncommon. An example is the heavy-fermion superconductor URu2Si2. This article is a stub. You can help Wikipedia by expanding it.This article is adapted from from Wikipedia All Wikipedia article text is available under the terms of the GNU Free Documentation License Magneto-Optics and Spectroscopy of Antiferromagnets by V. V. Eremenko Ising-Type Antiferromagnets: Model Systems in Statistical Physics and in the Magnetism of Exchange Bias (Springer Tracts in Modern Physics, 196.) by Christian Binek Magnetooptics and Spectroscopy of Antiferromagnets by V.V. Eremenko Nuclear magnetic resonance in ferro- and antiferromagnets by E. A. Turov Recent Antiferromagnet related patents From USPTO: 6714387: Spin valve head with reduced element gap 6707084: Antiferromagnetically stabilized pseudo spin valve for memory applications 6700760: Tunneling magnetoresistive head in current perpendicular to plane mode 6700753: Spin valve structures with specular reflection layers 6683762: CPP GMR device with inverse GMR material 6678128: Exchange coupling film and electroresistive sensor using the same 6677631: MRAM memory elements and method for manufacture of MRAM memory elements 6674664: Circuit selected joint magnetoresistive junction tunneling-giant magnetoresistive effects memory cells 6669787: Method of manufacturing a spin valve structure 6667901: Dual-junction magnetic memory device and read method 6664785: Assembly for measuring a magnetic field, using a bridge circuit of spin tunnel elements and a production method for the same 6661625: Spin-dependent tunneling sensor with low resistance metal oxide tunnel barrier 6661620: Differential CPP sensor 6650513: Magnetic devices with a ferromagnetic layer having perpendicular magnetic anisotropy and an antiferromagnetic layer for perpendicularly exchange biasing the ferromagnetic layer 6649254: Compensated crystalline superlattice ferrimagnets 6646530: Configuration for minimizing the Neel interaction between two ferromagnetic layers on both sides of a non-ferromagnetic separating layer 6643103: Very high linear resolution CPP differential dual spin valve magnetoresistive head 6631057: Magnetic device with ferromagnetic layer contacting specified yttrium or rare earth element oxide antiferromagnetic layer 6625059: Synthetic ferrimagnet reference layer for a magnetic storage device 6621732: Magnetic element, memory device and write head 6621667: Giant magnetoresistive sensor with a multilayer cap layer 6621664: Perpendicular recording head having integrated read and write portions 6614630: Top spin valve heads for ultra-high recording density 6607923: Method of making magnetoresistive read/ inductive write magnetic head assembly fabricated with silicon on hard insulator for improved durability and electrostatic discharge protection 6606782: Method of forming a continuous free layer spin valve sensor with patterned exchange underlayer stabilization 6580587: Quad-layer GMR sandwich 6577476: Flux guide structure for a spin valve transistor which includes a slider body semiconductor layer 6576969: Magneto-resistive device having soft reference layer 6567246: Magnetoresistance effect element and method for producing the same, and magnetoresistance effect type head, magnetic recording apparatus, and magnetoresistance effect memory element 6556392: Spin valve head with exchange bias stabilized free layer 6542341: Magnetic sensors having an antiferromagnetic layer exchange-coupled to a free layer 6538921: Circuit selection of magnetic memory cells and related cell structures 6538920: Cladded read conductor for a pinned-on-the-fly soft reference layer 6538917: Read methods for magneto-resistive device having soft reference layer 6534978: Electronic component 6522134: Method of resetting spin valve heads in a magnetic disk drive 6518588: Magnetic random access memory with thermally stable magnetic tunnel junction cells 6501678: Magnetic systems with irreversible characteristics and a method of manufacturing and repairing and operating such systems 6501271: Robust giant magnetoresistive effect type multilayer sensor 6498707: Giant magnetoresistive sensor with a CrMnPt pinning layer and a NiFeCr seed layer 6496334: Data storage and retrieval apparatus with thin film read head having planarized extra gap and shield layers and method of fabrication thereof 6490140: Giant magnetoresistive sensor with a PtMnX pinning layer and a NiFeCr seed layer 6469878: Data head and method using a single antiferromagnetic material to pin multiple magnetic layers with differing orientation 6466419: Current perpendicular to plane spin valve head 6465053: Method for manufacturing a magnetic device 6462919: Spin valve sensor with exchange tabs 6438026: Magnetic field element having a biasing magnetic layer structure 6433972: Giant magnetoresistive sensor with pinning layer 6429497: Method for improving breakdown voltage in magnetic tunnel junctions |